Liquid-phase epitaxial growth of (AlGa)As on polished and roughened GaP substrates for transmission photocathodes
- 1 March 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 24 (5) , 211-213
- https://doi.org/10.1063/1.1655156
Abstract
It is shown that growth of smooth layers of (AlGa)As on GaP by liquid phase epitaxy (LPE) can be achieved if the GaP substrate surface possesses a certain degree of roughness when growth starts. This roughness can be introduced by various methods, including preferential chemical etching or in situ melt‐back, but the best surface morphology of the epitaxial layer is obtained after mechanical lapping of the substrate. This striking phenomenon is attributed to an increase of the density of nuclei which results in a more uniform distribution of the grains characteristic for this system with large lattice mismatch.This publication has 4 references indexed in Scilit:
- Surface irregularities due to spiral growth in LPE layers of AlGaAs and InGaAsPJournal of Crystal Growth, 1973
- An improved GaAs transmission photocathodeJournal of Physics D: Applied Physics, 1972
- Ga1−xAlxAs LED Structures Grown on GaP SubstratesApplied Physics Letters, 1972
- Dependence on Crystalline Face of the Band Bending in Cs2 O-Activated GaAsJournal of Applied Physics, 1971