Characterization of molecular beam epitaxy grown CuInSe2 on GaAs(001)
- 1 May 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 150, 1196-1200
- https://doi.org/10.1016/0022-0248(95)80128-y
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Heteroepitaxy and characterization of CuInSe2 on GaAs(001)Journal of Crystal Growth, 1995
- Local Structure of CuInSe2 Thin Film Studied by EXAFSJapanese Journal of Applied Physics, 1993
- EXAFS Studies on (Cu, In)Se2Japanese Journal of Applied Physics, 1993
- Future Prospects of XAFS Researches Using High Brilliance Photon SourcesJapanese Journal of Applied Physics, 1993
- Improved ab initio calculations of amplitude and phase functions for extended x-ray absorption fine structure spectroscopyJournal of the American Chemical Society, 1988
- Extended x-ray-absorption fine-structure Debye-Waller factors and vibrational density of states in amorphous arsenicPhysical Review B, 1987
- Theory of the band-gap anomaly inchalcopyrite semiconductorsPhysical Review B, 1984