Influence of Preparation Conditions on the Radiative Recombination in Amorphous Silicon
- 1 January 1974
- book chapter
- Published by Springer Nature
- p. 1042-1046
- https://doi.org/10.1007/978-3-322-94774-1_180
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Photoconductivity and absorption in amorphous SiJournal of Non-Crystalline Solids, 1973
- Determination of Surface States at Clean, Cleaved Silicon Surfaces from PhotoconductivityPhysical Review Letters, 1971
- Review of the theory of amorphous semiconductorsJournal of Non-Crystalline Solids, 1970
- Photoconductivity Studies of Defects in Silicon: Divacancy-Associated Energy LevelsPhysical Review B, 1968
- Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-CenterPhysical Review B, 1961