Interfacial work functions and extrinsic silicon infrared photocathodes

Abstract
It is shown that n+ and/or p+ contacts on pin diodes can function as solid‐state photoemitters at temperatures ≲20 K. Infrared radiation can excite electrons or holes over small ni or pi interfacial barriers and into the intrinsic region when the diode is forward biased. Photoelectric thresholds in the far infrared corresponding to 37 and 61 μm cutoffs have been observed for silicon devices using a Fourier transform spectrometer. Suggestions are made to tailor the cutoff wavelengths using different concentrations of various impurities near the metal‐insulator transition. Epitaxially grown multilayered (superlattice) detectors are proposed.

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