Memory switching in films of oxide glasses containing bismuth
- 11 September 1975
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 8 (13) , L162-L165
- https://doi.org/10.1088/0022-3727/8/13/004
Abstract
Negative resistance and memory switching effects have been observed in Na2O-B2O3-Bi2O3-SiO2 glass films of thicknesses between 2 and 14 mu m. The off-state resistance could possibly arise due to electron hopping between conducting islands of bismuth. The on-state characteristics suggest that the memory action might be due to the formation of metallic filaments between the bismuth particles.Keywords
This publication has 2 references indexed in Scilit:
- Memory switching in ion-exchanged oxide glassesApplied Physics Letters, 1974
- Electrical Conduction Mechanism in Ultrathin, Evaporated Metal FilmsJournal of Applied Physics, 1962