A new method for calculating the noise parameters of MESFET's and TEGFET's

1 June 1985

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 6 (6) , 270-272
https://doi.org/10.1109/edl.1985.26122

Abstract

Analytical formulas for the intrinsic noise sources of both MESFET's and TEGFET's are derived from a numerical noise modeling. Using these expressions the calculated noise figure is in good agreement with experimental findings. The influence of gd and Cgd on the noise figure is then pointed out and a comparison between the kf factor of MESFET's and TEGFET's is presented.

Keywords

MESFETS
MODFETS
HEMTS
SEMICONDUCTOR DEVICE NOISE
NOISE FIGURE
CIRCUIT NOISE
NUMERICAL MODELS
VOLTAGE
IMPEDANCE
MILLIMETER WAVE TECHNOLOGY

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