Stacking faults in silicon carbide (6H) as observed by means of transmission electron microscopy
- 31 July 1971
- journal article
- Published by Elsevier in Materials Research Bulletin
- Vol. 6 (7) , 613-619
- https://doi.org/10.1016/0025-5408(71)90010-9
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Electron Microscopy of Dislocations and Other Defects in Sapphire and in Silicon Carbide, Thinned by SputteringPhysica Status Solidi (b), 1965