Polarisation dependence of field-induced refractive index variation in strained and unstrained quantum well structures
- 5 July 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (14) , 1060-1061
- https://doi.org/10.1049/el:19900686
Abstract
The polarisation dependence of the field-induced refractive index variation in strained and unstrained quantum well structures is analysed. It is shown that the effect of strain combined with the quantum-size effect can be used to control the polarisation dependence of the refractive index variation which is significant in thin quantum wells.Keywords
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