Tailored-gain broad-area semiconductor laser with single-lobed diffraction-limited far-field pattern
- 1 August 1985
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 21 (16) , 671-673
- https://doi.org/10.1049/el:19850475
Abstract
We demonstrate a 60 μm-wide asymmetric tailored-gain broad-area semiconductor laser with a single-lobed diffraction-limited far-field pattern 2.5° wide. The method used to achieve gain tailoring may be used to create nearly arbitrary two-dimensional spatial gain distributions within a broad-area laser.Keywords
This publication has 0 references indexed in Scilit: