Defect generation and morphology of (001) Si surfaces during low-energy Ar-ion bombardment

Low-energy ${\mathrm{Ar}}^{+}$-ion bombardment of atomically rough (001) Si surfaces has been investigated using atomistic simulations. The simulations suggest that ions with energy less than 20 eV selectively displace surface atoms without causing bulk damage and further that the displacement yield is surface site specific in this energy range. Interpreted in the context of recent experimental kinetic data for Si-surface self-diffusion, the simulations imply that above room temperature the most important effect of ion bombardment on surface self-diffusion and surface morphology is an increase in the formation rate of single adatoms rather than enhancement of the migration component of surface self-diffusion.