Epitaxial layers of CuInTe2 on GaAs
- 1 January 1980
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 15 (1) , 61-69
- https://doi.org/10.1002/crat.19800150110
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Electrical properties of CuGaTe2 epitaxial layersPhysica Status Solidi (a), 1979
- Measurement of lattice parameters of AIBIIICVI2 chalcopyrite-type epitaxial layers using reflection high energy electron diffractionThin Solid Films, 1979
- Growth and electrical properties of epitaxial CuInS2 thin films on GaAs substratesCrystal Research and Technology, 1979
- Absorption coefficient measurements for vacuum-deposited Cu-ternary thin filmsJournal of Vacuum Science and Technology, 1978
- Zur Heteroepitaxie von AIBIIIC2VI‐Verbindungen – Interpretation von RHEED‐DiagrammenCrystal Research and Technology, 1978
- Properties of liquid phase epitaxial Ge-doped GaAsPhysica Status Solidi (a), 1977
- Vacuum-deposited CuInTe2 thin films: Growth, structural, and electrical propertiesJournal of Vacuum Science and Technology, 1977
- Growth and characterization of thin‐film compound semiconductor photovoltaic heterojunctionsJournal of Vacuum Science and Technology, 1977
- Thermoelectric power of AIBIIIC2II type compounds in the solid and liquid statePhysica Status Solidi (b), 1966
- High-Temperature Resistivity of the Chalcopyritic Compound CuInTe[sub 2]Journal of the Electrochemical Society, 1966