Improved photoelectrochemical performance of Ti-doped α-Fe2O3 thin films by surface modification with fluoride
- 19 March 2009
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Chemical Communications
- No. 19,p. 2652-2654
- https://doi.org/10.1039/b901135h
Abstract
CoF3 aqueous solution was used to modify the surface of Ti-doped iron oxide thin film photoanodes to negatively shift the flat-band potential and allow photogenerated electrons to directly reduce water to hydrogen without an external bias; the zero bias performance was further improved by the use of glucose (a biomass analog) to bypass the relatively slow oxygen evolution reaction to provide a source of electrons to rapidly consume photogenerated holes.Keywords
This publication has 34 references indexed in Scilit:
- High-Throughput Screening Using Porous Photoelectrode for the Development of Visible-Light-Responsive SemiconductorsJournal of Combinatorial Chemistry, 2007
- New Benchmark for Water Photooxidation by Nanostructured α-Fe2O3 FilmsJournal of the American Chemical Society, 2006
- Synthesis and photoelectrochemical properties of nanoporous iron (III) oxide by potentiostatic anodizationNanotechnology, 2006
- Effects of TiO2 Surface Fluorination on Photocatalytic Reactions and Photoelectrochemical BehaviorsThe Journal of Physical Chemistry B, 2004
- Direct splitting of water under visible light irradiation with an oxide semiconductor photocatalystNature, 2001
- Wide-range tuning of the titanium dioxide flat-band potential by adsorption of fluoride and hydrofluoric acidThe Journal of Physical Chemistry, 1990
- Photoelectrochemistry and interfacial energetics of titanium dioxide photoelectrodes in fluoride-containing solutionsThe Journal of Physical Chemistry, 1990
- Photoassisted catalytic dissociation of water to produce hydrogen on partially reduced .alpha.-iron(III) oxideJournal of the American Chemical Society, 1987
- Photoactivity of doped αFe2O3 electrodesSolar Energy Materials, 1982
- 7.3% Efficient thin-film, polycrystalline n-gallium arsenide semiconductor liquid junction solar cellJournal of the American Chemical Society, 1979