The spectral response of BSF silicon solar cells fabricated through masked ion implantation

Abstract
The work presents the main peculiarities of the spectral response of back-surface-field (BSF) silicon solar cells fabricated through masked ion implantation of the n+-p junction. The emphasis is on the shift of maximum responsivity toward the visible spectrum and on the large bandwidth of these n+-p-p+ optical sensors. The dependence of these parameters on technological parameters are outlined in the communication.

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