Growth of 4H-SiC from liquid phase
- 30 April 1997
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 46 (1-3) , 329-332
- https://doi.org/10.1016/s0921-5107(96)02001-6
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Ga-bound excitons in 3C-, 4H-, and 6H-SiCPhysical Review B, 1996
- Phases in rapidly cooled scandium-silicon samplesJournal of Alloys and Compounds, 1994
- Raman scattering determination of free-carrier concentration and surface space-charge layer in 〈100〉 n-GaAsApplied Physics Letters, 1985
- Fabrication of 6H-SiC light-emitting diodes by a rotation dipping technique: Electroluminescence mechanismsJournal of Applied Physics, 1979
- Photoluminescence Due to Al, Ga, and B Acceptors in 4H‐, 6H‐, and 3 C ‐ SiC Grown from a Si MeltJournal of the Electrochemical Society, 1977
- Study of the silicon carbide preparation in the silicon–scandium–carbon systemPhysica Status Solidi (a), 1975
- The Growth of α-SiC from Various Chromium Alloys by a Travelling Solvent MethodJournal of the Electrochemical Society, 1965
- Crystal Growth of GaAs from Ga by a Traveling Solvent MethodJournal of Applied Physics, 1963