High-gain GaInP/GaAs heterojunction phototransistor utilising guard-ring structure
- 19 January 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (2) , 85-86
- https://doi.org/10.1049/el:19890063
Abstract
GaInP/GaAs heterojunction phototransistors with an emitter guard-ring contact are fabricated. The gain and speed of response of a device is significantly improved by the application of bias to the guard-ring, indicating that the recombination current U surface-dominated and that the quality of the GaInP/GaAs heterojunction interface is high.Keywords
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