de Haas-van Alphen Effect in Gallium at High dc Magnetic Fields
- 10 June 1966
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 146 (2) , 442-454
- https://doi.org/10.1103/PhysRev.146.442
Abstract
Results of low-frequency field-modulation de Haas-van Alphen (DHVA) measurements in gallium single crystals to 80 kG are presented. The data show many sections of a complex Fermi surface (FS). The DHVA frequency and amplitude data near the axis are consistent with partial magnetic breakdown. DHVA Dingle temperature measurements for the low-frequency oscillation along the axis, along with line shape of the giant quantum oscillations of Shapira and Lax for the same piece of FS and field orientation, indicate that the Landau levels associated with these carriers are not collision-broadened. Qualitative comparisons are made with recent magneto acoustic and rf size-effect data. The augmented-plane-wave (APW) calculation of Wood and the nearly-free-electron (NFE) model for the gallium FS are compared with experimental results. The NFE model does not agree with the DHVA or other related data, whereas qualitative comparisons are possible with the APW Fermi surface.
Keywords
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