Compound-Source Molecular Beam Epitaxy for ZnCdSe/ZnSSe/ZnMgSSe Laser Structure
- 1 December 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (12A) , L1673
- https://doi.org/10.1143/jjap.33.l1673
Abstract
We have developed compound-source molecular beam epitaxy (CSMBE) for ZnSe-based laser diodes. The CSMBE technique employs compound sources instead of elemental sources, and can reduces the number of growth parameters. Continuous-wave operation at room temperature of ZnCdSe/ZnSSe/ZnMgSSe laser diodes grown by CSMBE has been demonstrated. The threshold current was 68 mA for a gain-guided device 5 µm wide and 750 µm long.Keywords
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