Strained-layer InGaAs/GaInAsP/GaInP quantum well lasers grown by gas-source molecular beam epitaxy
- 22 March 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (12) , 1405-1407
- https://doi.org/10.1063/1.108694
Abstract
No abstract availableKeywords
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