High Speed InGaAs/InP Composite Collector Bipolar Transistors
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 0_99-0_100
- https://doi.org/10.1109/drc.1992.671885
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Bistable hot electron transport in InP/GaInAs composite collector heterojunction bipolar transistorsApplied Physics Letters, 1992