Reverse Current and Carrier Lifetime as a Function of Temperature in Germanium Junction Diodes

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Abstract
The reverse current and carrier lifetime have been measured in a series of germanium diodes as a function of temperature between room temperature and liquid nitrogen temperature. The lifetime reaches a plateau at low temperatures, and its behavior can be explained in terms of the Hall‐Shockley‐Read recombination theory. Log iR vs 1/T exhibits a break to a shallower slope at lower temperatures, which can be explained in terms of charge generation by recombination centers in the space‐charge region.