Physical and electrical characterization of ALCVD™ TiN and WNxCy used as a copper diffusion barrier in dual damascene backend structures (08.2)
- 31 October 2002
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 64 (1-4) , 247-253
- https://doi.org/10.1016/s0167-9317(02)00796-7
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Study of Ta as a Diffusion Barrier in Cu/SiO2 StructureMRS Proceedings, 2000