Device Characteristics of Organic Static Induction Transistor Using Copper Phthalocyanine Films and Al Gate Electrode
- 1 January 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (1R)
- https://doi.org/10.1143/jjap.38.256
Abstract
We have fabricated organic static induction transistors (SITs) using copper phthalocyanine (CuPc) films. The organic SITs have a layered structure of Au (drain)/CuPc/Al (gate)/CuPc/Au (source)/glass. The electrical characteristics of SITs show that the source-drain current is controlled by the bias voltage applied to the Al gate electrode and a typical SIT operation with unsaturated current characteristics is examined. Furthermore, excellent characteristics such as low voltage and high speed operation as organic transistors are obtained by choosing an appropriate thickness for each layer.Keywords
This publication has 6 references indexed in Scilit:
- Schottky gate static induction transistor using copper phthalocyanine filmsThin Solid Films, 1998
- Evaluation of Electrical Properties of Evaporated Thin Films of Metal-Free, Copper and Lead Phthalocyanines by In-Situ Field Effect MeasurementsJapanese Journal of Applied Physics, 1997
- Field-Effect Mobility of Molecularly Doped Poly(3-hexylthiophene)Japanese Journal of Applied Physics, 1997
- Organic field-effect transistors with high mobility based on copper phthalocyanineApplied Physics Letters, 1996
- Transient behaviour of thin film transistors based on nickel phthalocyanineThin Solid Films, 1995
- Field-effect transistor versus analog transistor (static induction transistor)IEEE Transactions on Electron Devices, 1975