Sensitivity of 0.1 μm MOSFETs to manufacturing fluctuations
- 22 July 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (15) , 1345-1346
- https://doi.org/10.1049/el:19930901
Abstract
A sensitivity analysis of 0.1 μm MOSFETs to manufacturing fluctuations has been carried out. The analysis reveals that the electrical parameter sensitivity in deep submicrometre devices differs from the currently produced micrometre size devices, making a revision of the validity of conventional semiconductor manufacturing heuristics for future technology mandatory.Keywords
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