Spin dependent luminescence in hydrogenated amorphous silicon
- 1 April 1978
- journal article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 37 (4) , 477-488
- https://doi.org/10.1080/01418637808225791
Abstract
Large spin-dependent changes in the luminescence of undoped and doped glow-discharge-deposited amorphous silicon have been observed. A pair of luminescence quenching lines was found for all doping levels, the fractional change in luminescence intensity ΔL/L being independent of temperature. A pair of enhancing lines with ΔL/L falling off as T−2 was observed in undoped and lightly doped samples. The resonant lines are very similar to those found in light-induced electron spin resonance under the same conditions. Non-resonant field-dependent luminescence is also reported. Models related to spin excitation of thermaiized and non-thermaiized electron-hole pairs are presented.Keywords
This publication has 3 references indexed in Scilit:
- Phonon interactions in the luminescence of amorphous siliconPhilosophical Magazine Part B, 1978
- Spin dependent exciton recombination at nitrogen isoelectronic traps in GaPSolid State Communications, 1977
- Optically induced electron spin resonance in doped amorphous siliconSolid State Communications, 1977