Erratum: MOS transconductors and integrators with high linearity

• 22 May 1986
• journal article
• Published by Institution of Engineering and Technology (IET) in Electronics Letters
• Vol. 22  (11) , 619
• https://doi.org/10.1049/el:19860421

Abstract

Keywords

• INTEGRATORS
• MOS TRANSCONDUCTORS
• NONLINEARITY ELIMINATION
• MONOLITHIC IC
• SIGNAL-DRIVEN
• ACTIVE NETWORKS
• LARGE GATE-SOURCE VOLTAGE