Atomic geometry of GaSb(110): Determination via elastic low-energy electron diffraction intensity analysis
- 15 March 1983
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 27 (6) , 3436-3444
- https://doi.org/10.1103/physrevb.27.3436
Abstract
No abstract availableThis publication has 24 references indexed in Scilit:
- Chemical and electronic structure of compound semiconductor–metal interfacesJournal of Vacuum Science and Technology, 1982
- Atomic structure of GaP (110) and (111) facesJournal of Vacuum Science and Technology, 1981
- Dynamical analysis of low-energy-electron-diffraction intensities from GaP(110)Physical Review B, 1981
- Analysis of low-energy electron diffraction intensities from ZnS(110)Journal of Vacuum Science and Technology, 1981
- Surface structure of ZnTe (110) as determined from dynamical analysis of low-energy-electron diffraction intensitiesPhysical Review B, 1980
- Unified defect model and beyondJournal of Vacuum Science and Technology, 1980
- Surface structure and bondingMaterials Science and Engineering, 1976
- Microscopic theory of covalent-ionic transition at metal-semiconductor interfacesSolid State Communications, 1973
- Ionicity of the Chemical Bond in CrystalsReviews of Modern Physics, 1970
- Metal-semiconductor surface barriersSolid-State Electronics, 1966