Abstract
In the Letter, for the first time a normal incidence type-II quantum well infra-red photodetector (QWIP) using an indirect AlAs/Al0.5Ga0.5As system grown on [110] oriented GaAs substrate is demonstrated. The peak IR response is at 12.8μm and the cutoff wavelength extended to λc = 18μm. This new QWIP also showed a broad and multipeak spectral response property from visible (0.5μm) to far infra-red wavelength (18μ).

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