Reactive ion etched GaAs optical waveguide modulators with low loss and high speed

29 March 1984

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 20 (7) , 295-297
https://doi.org/10.1049/el:19840202

Abstract

Single-mode rib waveguides and modulators for operation at 1.3 μm have been fabricated by reactive ion etching (RIE). The antireflection-coated devices show very low coupling and propagation loss (2 dB/cm) and are suitable as extracavity digital modulators in the Gbit/s range for single-mode system applications.

Keywords

LOSS
GAAS OPTICAL WAVEGUIDE MODULATORS
1.3 ΜM
REACTIVE ION ETCHING
PROPAGATION LOSS
GBIT/S RANGE
ANTIREFLECTION-COATED DEVICES
III-V SEMICONDUCTOR
EXTRA-CAVITY DIGITAL MODULATORS
SINGLE-MODE RIB WAVEGUIDES