Accelerated publication 16.4% total‐area conversion efficiency thin‐film polycrystalline MgF2/ZnO/CdS/Cu(In,Ga)Se2/Mo solar cell
- 1 October 1994
- journal article
- research article
- Published by Wiley in Progress In Photovoltaics
- Vol. 2 (4) , 287-292
- https://doi.org/10.1002/pip.4670020404
Abstract
This communication reports an MgF2/ZnO/CdS/Cu(In,Ga)Se2/Mo/glass polycrystalline solar cell with a confirmed total‐area conversion efficiency of 16.4%. the thin‐film Cu(In,Ga)Se2absorber was fabricated by computer‐controlled physical vapor deposition (PVD) from the elemental sources. the resulting absorber has a Gal/In compositional grading that we refer to as a notch. Capacitance‐voltage (C‐V) measurements also reveal a graded doping profile in the region near the electronic p‐n junction. the enhanced device performance is characterized by an open‐circuit voltage (Voc) of 660 mV and a particularly high fill factor (FF) of 78.7%.Keywords
This publication has 6 references indexed in Scilit:
- Computer simulation and modeling of the graded bandgap CuInSe/sub 2CdS solar cellPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Solution-grown CdS layers for polycrystalline-thin-film solar cellsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- I-III-VI/sub 2/ multinary solar cells based on CuInSe/sub 2/Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High efficiency polycrystalline Cu(In,Ga)Se2-based solar cellsAIP Conference Proceedings, 1994
- Graded band-gap Cu(In,Ga)Se2 thin-film solar cell absorber with enhanced open-circuit voltageApplied Physics Letters, 1993
- Solar cell efficiency tablesProgress In Photovoltaics, 1993