Monte Carlo particle simulation of GaAs submicron n + - i - n + diode
- 4 February 1982
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 18 (3) , 133-135
- https://doi.org/10.1049/el:19820089
Abstract
Monte Carlo particle simulation of a GaAs submicron n+-i-n+ diode showed that the electron transport in the diode is almost ballistic in nature, so long as the electron energy is below 0.36 eV. A maximum electron velocity of 1 × 108 cm s−1 was observed at certain conditions. Effects of the electron backscattering from the anode n+-layer are also discussed.Keywords
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