Method for Direct Determination of the Effective Correlation Energy of Defects in Semiconductors: Optical Modulation Spectroscopy of Dangling Bonds

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22 April 1985

journal article
research article
Published by American Physical Society (APS) in Physical Review Letters

Vol. 54 (16) , 1844-1847
https://doi.org/10.1103/physrevlett.54.1844

Abstract

The optical modulation technique is used for direct determination of energy levels and the effective correlation energy

U_{eff}

of dangling-bond defects. With an accuracy of 0.1 eV we found for the dangling-bond defect in

a

-Si: H,

U_{eff} = 0.5

eV; in

a

-

{As}_{2}

S_{3}

,

U_{eff} = - 1.0

eV; in

{As}_{2}

{Se}_{3}

,

U_{eff} = - 0.7

eV; and in trans-

{(CH)}_{x}

,

U_{eff} = 0.95

eV.

Keywords

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