Low-Frequency Noise in GaAs
- 1 July 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (7R)
- https://doi.org/10.1143/jjap.29.1250
Abstract
Low-frequency noise measurements were carried out on GaAs devices in the frequency and temperature ranges from 10 Hz to 100 kHz, and from 77 K to 300 K, respectively. The noise spectra are considered to be superpositions of generation-recombination noise components caused by traps. The activation energies of these traps are determined from the temperature dependence of the noise.Keywords
This publication has 2 references indexed in Scilit:
- Low-frequency noise in GaAs layers grown by molecular beam epitaxySolid-State Electronics, 1988
- High frequency excess noise and flicker noise in GaFs FETsSolid-State Electronics, 1979