Diffusional relaxation and void growth in an aluminum interconnect of very large scale integration
- 1 July 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (1) , 334-338
- https://doi.org/10.1063/1.347198
Abstract
Using the previously obtained stress distributions in an Al line after relaxation by plastic deformation, another possible relaxation process by diffusion was analyzed. Even after this relaxation occurs, some stresses still remain in the Al line. If these remaining stresses are large enough, they can be responsible for the growth of voids causing line failure. Using a theory for diffusional growth of grain-boundary voids, the time to failure of the Al line was estimated analytically. The previous and present papers together constitute a full analysis of the so-called ‘‘stress migration’’ phenomenon.This publication has 4 references indexed in Scilit:
- A New Approach for Diffusional Growth of Grain-Boundary VoidsTransactions of the Japan Institute of Metals, 1988
- Stress-induced grain boundary fractures in Al–Si interconnectsJournal of Vacuum Science & Technology B, 1987
- Activation energies for the different electromigration mechanisms in aluminumSolid-State Electronics, 1981
- Vacancy Potential and Void Growth on Grain BoundariesMetal Science, 1975