Effect of Direct Current on Precipitation in Quenched Al + 4% Cu Thin Films
- 15 March 1972
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 20 (6) , 217-219
- https://doi.org/10.1063/1.1654117
Abstract
Resistance changes associated with precipitation in Al–Cu thin films were monitored during power annealing at current densities up to 4×106 A/cm2 and temperatures of ∼178 and 200 °C. The rate of change of resistance decreased as the current increased. It is argued that this decrease is due to the current inhibiting the precipitation of θ Al2Cu.Keywords
This publication has 12 references indexed in Scilit:
- Activation Energy for Electromigration in Aluminum Films Alloyed with CopperIBM Journal of Research and Development, 1971
- Electromigration Damage in Thin Films due to Grain Boundary Grooving ProcessesJournal of Applied Physics, 1971
- Electromigration in Thin Al FilmsJournal of Applied Physics, 1969
- Growth of grain boundary precipitates in Al-4% Cu by interfacial diffusionActa Metallurgica, 1968
- RESISTANCE MONITORING AND EFFECTS OF NONADHESION DURING ELECTROMIGRATION IN ALUMINUM FILMSApplied Physics Letters, 1968
- Current-induced mass transport in aluminumJournal of Physics and Chemistry of Solids, 1964
- Sur l'electrolyse des alliages metalliquesJournal of Physics and Chemistry of Solids, 1962
- Current-induced marker motion in gold wiresJournal of Physics and Chemistry of Solids, 1961
- Theory of diffusion-limited precipitationJournal of Physics and Chemistry of Solids, 1958
- A dislocation-attraction model for the first stage of temperingActa Metallurgica, 1956