Annealing of the deep recombination center in GaInP/AlGaInP quantum wells grown by solid-source molecular beam epitaxy

Publisher Website
Google Scholar
Abstract
Time resolved photoluminescence and deep level transient spectroscopy have been used to monitor the effect of rapid thermal annealing on bulk GaInP and GaInP/AlGaInP quantum wells grown by solid source molecular beam epitaxy similar to those used in 650 nm range lasers. Following rapid thermal annealing at temperatures up to 875 °C, reductions in the concentration of several deep level traps are observed. Correlation of these data with photoluminescent intensity and lifetime measurements indicate that the defect labeled N3, 0.83 eV below the conduction band, is the dominant recombination center. The combination of these two transient spectroscopy measurement techniques is therefore not only able to measure the change in deep level concentration, but also to correlate this change with improved carrier lifetimes and, ultimately, reduced threshold current densities in quantum well lasers. There is also evidence to suggest that this same defect, possibly a phosphorous vacancy or a related complex, plays an important role in other GaInP based devices.