Nonlinearity Measurements Using Alternating Current

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Abstract
The nonlinearity measurement technique described uses an adapted conventional lock‐in‐amplifier. This technique enables us to measure small nonlinearities over a wide frequency band and is more sensitive than the 1/f noise measurement used to detect non‐homogeneous structures in conductors, resistors and semiconductor components. Results illustrating uses of this method are presented for different types of resistor and semiconductor structures.

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