Mechanism of Ultrasonic Loss in Silicon and Aluminum

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Abstract
Attenuation in single crystals of silicon was measured as a function of frequency with a previously described technique. It was confirmed that, as in the case of aluminum, this dependence, in the range of frequencies from 20 to 110 Mc/sec, is of the form α=α0 exp (Cf), where α is attenuation, f is frequency, and α0 and C are constants. Heat‐treating experiments indicate that the form in which oxygen is present in the material has a pronounced effect on the energy loss. Multiple scattering is proposed as a mechanism of loss in silicon and aluminum single crystals. An empirical model of multiple scattering is discussed. It is confirmed that dislocations in silicon, at room temperature, do not contribute to the observed energy loss. Also it is proposed that the accepted relation for the evaluation of thermoelastic losses should be modified.

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