Material characterization for III-nitride-based light emitters

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Abstract
A review is presented of the electrical and optical properties of nitride based optoelectronic devices, in particular AlGaInN light emitting diodes and laser diode structures. The III-nitride films and devices were grown by organometallic vapor-phase epitaxy on c- and a-face sapphire substrates. We will discuss the structural properties of GaN. InGaN and AlGaN films, heterostructures and InGaN/GaN quantum wells using x-ray diffraction and cross-sectional transmission electron microscope and describe their electrical and optical properties characterized by Hall effect, photoluminescence, and electroluminescence measurements.

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