A new conduction model for polycrystalline silicon films
- 1 April 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 2 (4) , 95-98
- https://doi.org/10.1109/edl.1981.25354
Abstract
A new quantitative electrical model is introduced to solve earlier modeling inadequacies in polycrystalline silicon films. An analytical J-V expression is developed in normalized closed form, which includes the thermionic field emission through a space-charge potential barrier and through a grain-boundary scattering potential barrier and the thermionic emission over these barriers. The modeling validity has been verified experimentally for films with grain sizes of 230 to 1220 Å, doping concentrations from 1 × 1016to 8 × 1019cm-3and over a temperature range from -176° to 144°C.Keywords
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