Grain growth mechanism during recrystallisation of a tellurium-rich Hg1-xCdxTe cast
- 30 November 1985
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 73 (2) , 343-349
- https://doi.org/10.1016/0022-0248(85)90311-2
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Low temperature synthesis of binary chalcogenidesMaterials Research Bulletin, 1983
- Liquidus temperatures of hg-rich Hg-Cd-Te alloys*Journal of Electronic Materials, 1983
- Liquid phase epitaxy of Hg1−xCdxCdxTeJournal of Crystal Growth, 1982
- Growth and properties of Hg1-x Cdx Te epitaxial layersJournal of Electronic Materials, 1982
- Slider LPE of Hg1-xCdxTe using mercury pressure controlled growth solutionsJournal of Electronic Materials, 1981
- Liquid Phase Epitaxial Growth of ( Hg1 − x Cd x ) Te from Tellurium‐Rich Solutions Using a Closed Tube Tipping TechniqueJournal of the Electrochemical Society, 1981
- Liquidus isotherms, solidus lines and LPE growth in the Te-rich corner of the Hg-Cd-Te systemJournal of Electronic Materials, 1980
- Liquid Phase Growth of HgCdTe Epitaxial LayersJournal of the Electrochemical Society, 1980
- Comparison of Hg0.6Cd0.4Te LPE layer growth from Te-, Hg-, and HgTe-rich solutionsIEEE Transactions on Electron Devices, 1980
- Crystal growth of Hg1−Cd Te using Te as a solventJournal of Crystal Growth, 1972