A new model for the (2x1) reconstructed CoSi2-Si(100) interface
- 1 March 1998
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Letters
- Vol. 77 (3) , 147-152
- https://doi.org/10.1080/095008398178589
Abstract
A new model is presented for the (2x1) reconstructed CoSi-Si2(100) interface, derived from high-resolution electron microscopy observations, based on the Si point-defect behaviour during film growth and the structural stability of extended defects along the 011 direction in diamond-type materials. The model, consisting of an alternating array of double five-membered and single eightmembered rings, is realized through the migration of Si self-interstitials towards the interface, thereby creating 100 split interstitials.Keywords
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