Detection and Analysis of Phase Separation in Metalorganic Chemical Vapor Deposition InGaN
- 1 January 1997
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Growth and characterization of In-based nitride compoundsJournal of Crystal Growth, 1997
- Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy compositionApplied Physics Letters, 1997
- Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nmApplied Physics Letters, 1997
- Effect of hydrogen on the indium incorporation in InGaN epitaxial filmsApplied Physics Letters, 1997
- Solid phase immiscibility in GaInNApplied Physics Letters, 1996
- High quality InGaN films by atomic layer epitaxyApplied Physics Letters, 1995
- Growth of device quality GaN at 550 °C by atomic layer epitaxyApplied Physics Letters, 1995
- New Buffer Layers for GaN on Sapphire by Atomic Layer and Molecular Stream EpitaxyMRS Proceedings, 1995
- Preparation and optical properties of Ga1−xInxN thin filmsJournal of Applied Physics, 1975
- Calculation of ternary and quaternary III–V phase diagramsJournal of Crystal Growth, 1974