Pyroelectric Infrared Sensor Using PbTO3 Thin Film

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Abstract
A pyroelectric infrared sensor made of PbTiO3 ferroelectric thin film constructed on Si wafer has been developed. Pyroelectric output signal is amplified in current mode by a bipolar transistor which is devised on the same Si wafer. The device performance is much improved in high frequency region as compared with that of previous FET mode monolithic sensors, and it can be operated up to a few tens kHz region. Current responsivity of the PbTiO3 film has been also increased by reducing a heat capacity of the sensitive area and the output voltage of the device is 1.1 mV under the illumination of 120 mW/cm2 at 1 kHz which is one order of magnitude larger than that of the previous FET mode structure attached directly to Si wafer. The detectivity is ∼105 cm √Hz/W with bandwidth of 1 Hz at chopping frequency of 1 kHz. The rise time of the response measured under CO2 laser pulse irradiation is about 2.5 µs.

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