InP surface conducting films from electron-pulse annealing
- 1 June 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (11) , 922-924
- https://doi.org/10.1063/1.91374
Abstract
Heavily conducting layers have been observed in InP subjected to pulse electron beam annealing. No implantation is involved and sheet resistivities of ∼10 Ω/⧠ are typically obtained. The conduction is confined to within ∼500 Å of the surface and is annealable thermally ∼400 °C. Indicated concentrations are ≳1021 cm−3. Both electron microscopy and Rutherford backscattering show that electron beam annealing leads to a phosphorus loss at the surface. It is presumed that the observed conduction can be attributed to some defect associated with phosphorus loss.Keywords
This publication has 3 references indexed in Scilit:
- Pulse electron annealing of ion-implanted InPApplied Physics Letters, 1979
- Pulsed-electron-beam annealing of ion-implantation damageJournal of Applied Physics, 1979
- Anodic Oxidation and Electrical Carrier Concentration Profiles of Ion‐Implanted InPJournal of the Electrochemical Society, 1979