Investigation of Si-Ta2O5 System Prepared by Reactive Sputtering
- 1 September 1966
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 5 (9)
- https://doi.org/10.1143/jjap.5.844
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Physical limitations on the frequency response of a semiconductor surface inversion layerSolid-State Electronics, 1965
- Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structuresSolid-State Electronics, 1965
- Semiconductor Surface VaractorBell System Technical Journal, 1962