SIMS Evidence Concerning Water in Passive Layers

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Abstract
The regular associated solution model is used to treat the phase diagrams of the binary II–VI semiconductor alloy systems Hg‐Te and Cd‐Te. The equations for the species activity coefficients are used without approximations regarding the magnitudes of the various binary interchange energies or the functional dependence on component mol fraction. The values of the four adjustable parameters required for description of each system are fixed by fitting liquidus data, and the resulting activity coefficients are used to calculate component partial pressures, which are compared with experimental values as an independent check of the validity of the model. The results show that the regular associated solution model provides a usefully accurate, but not complete, description for both the Hg‐Te and Cd‐Te systems. The relationship of this work to previous investigations is discussed.

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