Band-edge hydrostatic deformation potentials in III-V semiconductors
- 27 July 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 59 (4) , 501-504
- https://doi.org/10.1103/physrevlett.59.501
Abstract
We report experimental values for the band-edge hydrostatic deformation potentials of GaAs and InP semiconductors. The deformation potentials are determined directly by observation of the universal pressure derivative of transition-metal defect levels and consideration of this pressure derivative in the context of recent models of heterojunction band lineup. We obtain values of -9.3 and -7.0 eV for the conduction-band deformation potentials of GaAs and InP, respectively, determined from the uniaxial-stress deep-level transient spectroscopy on defect levels of Ti and V.Keywords
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