Computer calculation of silicon avalanche diodes

1 July 1970

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 17 (7) , 514-519
https://doi.org/10.1109/T-ED.1970.17023

Abstract

The efficiency η and output power P per unit area were computed for silicon p-n-n+avalanche diodes having an active region of 5 microns. The condition for making both η andPmaximum is that the field at the n-n+interface generated by impurity and bias voltage is about one fourth of that at the junction under oscillation conditions. The maximum η andPwere calculated to be about 20.5 per cent and 53 kW/cm2. Dc current density J0for maximumPwas about 4200 A/cm2. On the other hand, J0for maximum η was calculated to be about 800 A/cm2. It was found that a diode having an abrupt type junction is the best. The condition under which a diode is represented by use of a diode with abrupt type junction is that the region of a homogeneous field near the junction is less than one fifth of the space-charge region.

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