Mapping nonlinearities over the active regions of semiconductor devices
- 1 January 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 64 (11) , 1635-1637
- https://doi.org/10.1109/proc.1976.10393
Abstract
A laser scanner employing a modulated low-power 0.633- µm He-Ne laser has been used in a nondamaging manner to locate portions of a silicon bipolar UHF transistor which electrically behave in a nonlinear manner at a signal frequency of 470 MHz. In effect, the method uses the device scanned as a frequency converter to produce an IF output for a display screen whenever the laser spot is incident on nonlinear regions.Keywords
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