Thermal stability of the midgap acceptor rhodium in indium phosphide
- 24 July 1995
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (4) , 479-481
- https://doi.org/10.1063/1.114542
Abstract
We investigated the thermally induced redistribution of Rh in low pressure MOCVD grown InP structures by means of secondary-ion-mass-spectroscopy. Analogous measurements for InP:Fe structures serve as reference. On alternately Rh-doped/undoped InP structures an upper limit for the diffusion coefficient of DRh(800 °C)≤1×10−14 cm2/s is established much smaller than DFe(750 °C)=1×10−11 cm2/s. No exchange reactions are observed at the interface of p-InP/InP:Rh structures. Only Rh implanted into InP shows defect induced redistribution into amorphous areas. Rh is superior to Fe as far as thermal stability is concerned.Keywords
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